2001/09/30 by A. M. M. Pruisken, D. T. N. de Lang, D.T.N. de Lang +3 · 2 citations
Engineering · Mathematics · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Condensed matter physics #Electron #Heterojunction #Insulator (electricity) #Mathematics #Physics #Plateau (mathematics) #Quantum #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Quantum spin Hall effect #Quantum well #Scaling #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall #cond-mat.str-el
paper · pdf · doi:10.1016/j.ssc.2006.01.016
published as Solid State Comm. 137 (2006) 540-544. · 4 pages, 2 figures
arxiv created 2002/05/07 · openalex publication_date 2006/02/01 · arxiv updated 2015/06/24 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We report new experimental data on the plateau-insulator transition in the quantum Hall regime, taken from a low mobility InGaAs/InP heterostructure. By employing the fundamental symmetries of the quantum transport problem we are able to disentangle the universal quantum critical aspects of the magnetoresistance data (critical indices and scaling functions) and the sample dependent aspects due to macroscopic inhomogeneities. Our new results and methodology indicate that the previously established experimental value for the critical index (kappa = 0.42) resulted from an admixture of both universal and sample dependent behavior. A novel, non-Fermi liquid value is found (kappa = 0.57) along with the leading corrections to scaling. The statement of self-duality under the Chern Simons flux attachment transformation is verified.