2006/02/28 by D. T. N. de Lang, D.T.N. de Lang, L. A. Ponomarenko +3
Physics and Astronomy · #Condensed matter physics #Electron #Fermi gas #Magnetic field #Physics #Physics of Superconductivity and Magnetism #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Quantum, superfluid, helium dynamics #Scaling #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.75.035313
published as Phys. Rev. B 75 (2007) 35313-1:7 · improved figures, paragraph added, accepted for publ. in PRB
arxiv created 2006/10/05 · openalex publication_date 2007/01/09 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We have investigated the Hall resistance RH near the plateau-insulator transition of a two-dimensional electron gas in the quantum critical regime. High-field magnetotransport data taken on a low-mobility InGaAs∕InP heterostructure with the plateau-insulator transition at a critical field Bc of 17.2\phantom\rule0.3em0exT show that the Hall resistance RH is quantized at h∕e2 near the critical filling fraction (\ensuremathνc=0.55) for T<1\phantom\rule0.3em0exK. By making use of universal scaling functions extracted from the magnetotransport data we show that RH in the insulating phase in the limit T\ensuremath→0 is quantized at h∕e2 for all values of the scaling parameter \ensuremathΔ\ensuremathν∕(T∕T0)^\ensuremathκ with \ensuremathΔ\ensuremathν=\ensuremathν\ensuremath-\ensuremathνc. However, as a function of \ensuremathΔ\ensuremathν (or magnetic field) the Hall resistance diverges in the limit T\ensuremath→0 for all values \ensuremathν<\ensuremathνc.