2014/01/19 by Kazuhiro Morimoto, K. Morimoto, T. Fujita +16 · 1 citation
Chemistry · Computer Science · Physics and Astronomy · #Atomic physics #Chemistry #Electron #Excitation #Materials science #Nuclear magnetic resonance #Optics #Optoelectronics #Photoelectric effect #Photon #Physics #Polarization (electrochemistry) #Quantum Information and Cryptography #Quantum and electron transport phenomena #Quantum dot #Quantum tunnelling #Semiconductor Quantum Structures and Devices #X-ray photoelectron spectroscopy #cond-mat.mes-hall #quant-ph
paper · pdf · doi:10.1103/physrevb.90.085306
5 pages, 5 figures
arxiv created 2014/01/19 · openalex publication_date 2014/08/12 · arxiv updated 2015/06/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We demonstrate the real-time detection of single photogenerated electrons in lateral double quantum dots made in AlGaAs/GaAs/AlGaAs quantum wells with either a thin (20 nm) or a thick (100 nm) AlGaAs barrier layer. The observed photon energy and power dependencies of the photoelectron detection efficiency both indicate that the trapped photoelectrons are predominantly generated in the buffer layer followed by tunneling into one of the two dots for the thin barrier sample, whereas they are directly generated in the well in the thick barrier sample. Single photoelectron detection after selective excitation of the heavy- and light-hole state in the dot is well resolved in the latter case. This ensures the applicability of our quantum well-based quantum dot systems for the coherent projection from single photon polarization to single electron spin states.