2011/08/12 by Hannon, J. B., Copel, M., Tromp, R. M.
#FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci)
paper · doi:10.48550/arxiv.1108.2627
We have determined the growth mode of graphene on SiC(0001) and SiC(000-1) using ultra-thin, isotopically-labeled Si13C `marker layers' grown epitaxially on the Si12C surfaces. Few-layer graphene overlayers were formed via thermal decomposition at elevated temperature. For both surface terminations (Si-face and C-face), we find that the 13C is located mainly in the outermost graphene layers, indicating that, during decomposition, new graphene layers form underneath existing ones.