Atmospheric pressure graphitization of SiC(0001)- A route towards wafer-size graphene layers

2008/08/08 by K. V. Emtsev, Aaron Bostwick, Emtsev, Konstantin V. +25 · 1 citation
Materials Science · #Carbon Nanotubes in Composites #Chemical and Physical Properties of Materials #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci)

paper · pdf · doi:10.48550/arxiv.0808.1222

openalex publication_date 2008/08/08 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We have investigated epitaxial graphene films grown on SiC(0001) by annealing in an atmosphere of Ar instead of vacuum. Using AFM and LEEM we observe a significantly improved surface morphology and graphene domain size. Hall measurements on monolayer graphene films show a carrier mobility of around 1000 cm²/Vs at room temperature and 2000 cm²/Vs at 27K. The growth process introduced here establishes the synthesis of graphene films on a technologically viable basis.

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