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Doped Mott Insulators in (111) Bilayers of Perovskite Transition-Metal Oxides with a Strong Spin-Orbit Coupling

2012/10/31 by Satoshi Okamoto · 74 citations
Chemistry · Materials Science · Physics and Astronomy · #Advanced Condensed Matter Physics #Anisotropy #Antiferromagnetism #Chemistry #Condensed matter physics #Doping #Electronic and Structural Properties of Oxides #Hubbard model #Magnetic and transport properties of perovskites and related materials #Materials science #Mott insulator #Mott transition #Perovskite (structure) #Phase (matter) #Phase diagram #Physics #Quantum mechanics #Spin (aerodynamics) #Spin–orbit interaction #Superconductivity #Thermodynamics #cond-mat.str-el

paper · pdf · doi:10.1103/physrevlett.110.066403

published in Physical Review Letters 110(6), 066403 (American Physical Society) · Main text: 5 pages, 3 figures. Supplementary material: 5 pages, 1 figures

arxiv created 2013/02/06 · openalex publication_date 2013/02/06 · arxiv updated 2015/06/11 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

The electronic properties of Mott insulators realized in (111) bilayers of perovskite transition-metal oxides are studied. The low-energy effective Hamiltonians for such Mott insulators are derived in the presence of a strong spin-orbit coupling. These models are characterized by the antiferromagnetic Heisenberg interaction and the anisotropic interaction whose form depends on the d orbital occupancy. From exact diagonalization analyses on finite clusters, the ground state phase diagrams are derived, including a Kitaev spin liquid phase in a narrow parameter regime for t(2g) systems. Slave-boson mean-field analyses indicate the possibility of novel superconducting states induced by carrier doping into the Mott-insulating parent systems, suggesting the present model systems as unique playgrounds for studying correlation-induced novel phenomena. Possible experimental realizations are also discussed.

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