Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures

2011/06/30 by Di Xiao, Wenguang Zhu, Ying Ran +2 · 481 citations
Materials Science · Physics and Astronomy · #Advanced Condensed Matter Physics #Band gap #Condensed matter physics #Dopant #Doping #Electron #Electronic and Structural Properties of Oxides #Heterojunction #Materials science #Physics #Quantum Hall effect #Quantum anomalous Hall effect #Quantum mechanics #Quantum spin Hall effect #Spin (aerodynamics) #Topological Materials and Phenomena #Topological insulator #Topology (electrical circuits) #cond-mat.mtrl-sci #cond-mat.str-el

paper · pdf · doi:10.1038/ncomms1602

published in Nature Communications 2(1), 596 (Nature Portfolio) · Main text 11 pages with 4 figures and 1 table. Supplementary materials 4 pages with 2 figures

openalex publication_date 2011/12/20 · arxiv created 2011/12/26 · arxiv updated 2011/12/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

Topological insulators are characterized by a nontrivial band topology driven by the spin-orbit coupling. To fully explore the fundamental science and application of topological insulators, material realization is indispensable. Here we predict, based on tight-binding modeling and first-principles calculations, that bilayers of perovskite-type transition-metal oxides grown along the [111] crystallographic axis are potential candidates for two-dimensional topological insulators. The topological band structure of these materials can be fine-tuned by changing dopant ions, substrates, and external gate voltages. We predict that LaAuO₃ bilayers have a topologically-nontrivial energy gap of about 0.15 eV, which is sufficiently large to realize the quantum spin-Hall effect at room temperature. Intriguing phenomena, such as fractional quantum Hall effect, associated with the nearly-flat topologically-nontrivial bands found in e_g systems are also discussed.

Citations

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• Z2Topological Order and the Quantum Spin Hall Effect
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• Nonabelions in the fractional quantum hall effect
• Fractional Quantum Hall Effect of Hard-Core Bosons in Topological Flat Bands

Cited by

• Novel phenomena in transition-metal oxide thin films and heterostructures with strong correlations and spin-orbit coupling
• Doped Mott Insulators in (111) Bilayers of Perovskite Transition-Metal Oxides with a Strong Spin-Orbit Coupling
• Reconstruction-stabilized epitaxy of LaCoO3/SrTiO3(111) heterostructures by pulsed laser deposition