2015/03/18 by David A. Boyd, D. A. Boyd, Wei–Hsiang Lin +21 · 1 citation
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Advancements in Battery Materials #Chemical engineering #Chemical vapor deposition #Chemistry #Copper #Deposition (geology) #Graphene #Graphene and Nanomaterials Applications #Graphene research and applications #Materials science #Metallurgy #Nanotechnology #Nucleation #cond-mat.mtrl-sci
paper · pdf · doi:10.1038/ncomms7620
published as Nature Communications 6, 6620 (2015) · 20 pages & 5 figures in Main Text; 12 pages & 9 figures in supplementary material
openalex publication_date 2015/03/18 · arxiv created 2015/06/05 · arxiv updated 2015/06/09 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Current methods of chemical vapour deposition (CVD) of graphene on copper are complicated by multiple processing steps and by high temperatures required in both preparing the copper and inducing subsequent film growth. Here we demonstrate a plasma-enhanced CVD chemistry that enables the entire process to take place in a single step, at reduced temperatures (<420 °C), and in a matter of minutes. Growth on copper foils is found to nucleate from arrays of well-aligned domains, and the ensuing films possess sub-nanometre smoothness, excellent crystalline quality, low strain, few defects and room-temperature electrical mobility up to (6.0±1.0) × 10(4) cm(2) V(-1) s(-1), better than that of large, single-crystalline graphene derived from thermal CVD growth. These results indicate that elevated temperatures and crystalline substrates are not necessary for synthesizing high-quality graphene.