2019/05/25 by О. И. Величко, Velichko, O. I.
Engineering · Materials Science · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Silicon Nanostructures and Photoluminescence #Silicon and Solar Cell Technologies #Thin-Film Transistor Technologies
paper · pdf · doi:10.48550/arxiv.1905.10667
openalex publication_date 2019/05/25 · openalex created_date 2019/05/29 · openalex updated_date 2026/07/28
A comprehensive model of high-concentration phosphorus diffusion has been developed and simulation of phosphorus diffusion from a constant source (phosphosilicate glass) at a temperature of 890 Celsius degrees for 14.25 min. has been carried out. Such doping processes are widely used in manufacturing modern solar cells. The proposed model combines the ideas of the drift of silicon self-interstitials in the field of elastic stresses with the concept of the formation of negatively charge clusters of impurity atoms. The calculated phosphorus concentration profile is in good agreement with the experimental one.