2014/07/12 by О. И. Величко, Oleg Velichko, Velichko, Oleg · 1 citation
Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and interfaces #Silicon and Solar Cell Technologies #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1407.3407
16 pages, 4 figures
arxiv created 2014/07/12 · openalex publication_date 2014/07/12 · arxiv updated 2014/07/15 · openalex created_date 2022/10/04 · openalex updated_date 2026/07/28
Modeling of radiation-enhanced diffusion of boron and phosphorus atoms during irradiation of silicon substrates respectively with high- and low-energy protons was carried out. The results obtained confirm the previously arrived conclusion that impurity diffusion occurs by means of the "impurity atom - intrinsic point defect" pairs and that the condition of the local thermodynamic equilibrium between substitutional impurity atoms, nonequilibrium point defects created by irradiation, and the pairs is valid. It is shown that using radiation-enhanced diffusion, one can form a special impurity distribution in the semiconductor substrate including retrograde profiles with increasing impurity concentration into the bulk of a semiconductor. The calculations performed give clear evidence in favor of further investigation of various doping processes based on radiation-enhanced diffusion, especially the processes of plasma doping, to develop a cheap method for formation of specific impurity distributions in the near surface region.