Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots

2010/09/22 by V. Dimastrodonato, Valeria Dimastrodonato, L. Mereni +4 · 8 citations
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Chemistry #Epitaxy #Materials science #Metalorganic vapour phase epitaxy #Nanotechnology #Optoelectronics #Organic chemistry #Phase (matter) #Physics #Quality (philosophy) #Quantum Dots Synthesis And Properties #Quantum dot #Quantum mechanics #Relevance (law) #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #Thermodynamics #Vapor phase #cond-mat.mtrl-sci

paper · pdf · doi:10.1016/j.jcrysgro.2010.09.011

published in Journal of Crystal Growth 315(1), 119-122 (Elsevier BV) · ICMOVPE 2010 Proceeding

openalex publication_date 2010/09/22 · arxiv created 2011/04/05 · arxiv updated 2015/05/27 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We report in this work on the spectral purity of pyramidal site-controlled InGaAs/AlGaAs Quantum Dots grown by metalorganic vapour phase epitaxy on(111)B oriented GaAs substrates. Extremely sharp emission peaks were found, showing linewidths surprisingly narrow (~27μeV) and comparable to those which can be obtained by Molecular Beam Epitaxy in an ultra-high vacuum environment. A careful reactor handling is regarded as a crucial step toward the fabrication of high optical quality systems.

Citations

• Regulated and Entangled Photons from a Single Quantum Dot
• A semiconductor source of triggered entangled photon pairs
• A Quantum Dot Single-Photon Turnstile Device
• Controlling the Spontaneous Emission Rate of Single Quantum Dots in a Two-Dimensional Photonic Crystal