Silicon Detector Arrays with Absolute Quantum Efficiency over 50% in the Far Ultraviolet for Single Photon Counting Applications

2011/02/10 by Shouleh Nikzad, Michael E. Hoenk, Frank Greer +8 · 1 citation
Physics and Astronomy · #astro-ph.IM #physics.ins-det

paper · pdf · doi:10.1364/ao.51.000365

This article has been submitted to Applied Physics Letters (APL). After it is published, it will be found at (URL/link to the entry page of the journal http://www.apl.aip.org

arxiv created 2011/02/10 · arxiv updated 2015/05/27

Abstract

We have used Molecular Beam Epitaxy (MBE)-based delta doping technology to demonstrate near 100% internal quantum efficiency (QE) on silicon electron-multiplied Charge Coupled Devices (EMCCDs) for single photon counting detection applications. Furthermore, we have used precision techniques for depositing antireflection (AR) coatings by employing Atomic Layer Deposition (ALD) and demonstrated over 50% external QE in the far and near-ultraviolet in megapixel arrays. We have demonstrated that other device parameters such as dark current are unchanged after these processes. In this paper, we report on these results and briefly discuss the techniques and processes employed.

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