Topological insulating phases in monolayer and bilayer graphene: An effective action approach

2010/07/31 by Alberto Cortijo, Adolfo G. Grushin, Maria A. H. Vozmediano +1 · 2 citations
Chemistry · Materials Science · Mathematics · Physics and Astronomy · #Bilayer #Bilayer graphene #Bilinear interpolation #Chemistry #Computer science #Condensed matter physics #Formalism (music) #Graphene #Graphene research and applications #Materials science #Mathematics #Membrane #Monolayer #Nanotechnology #Physics #Quantum Mechanics and Non-Hermitian Physics #Topological Materials and Phenomena #Topology (electrical circuits) #cond-mat.mes-hall #hep-th

paper · pdf · doi:10.1103/physrevb.82.195438

published as Phys.Rev.B82:195438,2010

openalex publication_date 2010/11/19 · arxiv created 2010/11/20 · arxiv updated 2015/05/19 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

We analyze the influence of different bilinear terms giving rise to time-reversal invariant topological insulating phases in monolayer and bilayer graphene. We make use of the effective action formalism to determine the dependence of the Chern Simons coefficient on the different interactions and generalize the formalism to include various degrees of freedom arising in bilayer graphene which give rise to different topological phases.

Citations

• Classification of topological insulators and superconductors in three spatial dimensions
• Quantum Spin Hall Effect in Graphene
• Quantum Renormalization of the Spin Hall Effect
• Intrinsic and Rashba spin-orbit interactions in graphene sheets
• Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps
• Masses in graphenelike two-dimensional electronic systems: Topological defects in order parameters and their fractional exchange statistics
• Topological Insulators
• The electronic properties of graphene
• Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
• Topologically massive gauge theories

Cited by

• Effective field theory for the bulk-edge correspondence in a two-dimensionalZ2topological insulator with Rashba interactions
• Charge instabilities and topological phases in the extended Hubbard model on the honeycomb lattice with enlarged unit cell

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• Topologically enabled superconductivity: possible implications for rhombohedral graphene
• Topological defects in Haldane model and higher Chern numbers in monolayer graphene
• Graphene nanosystems and low-dimensional Chern-Simons topological insulators