2010/03/31 by Shengli Zhang, Sheng-Li Zhang, Wei Wang +3
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Chemistry #Condensed matter physics #Doping #Electronic and Structural Properties of Oxides #Ferromagnetism #Germanium #Impurity #Inorganic Chemistry and Materials #Magnetic semiconductor #Materials science #Metal #Metallurgy #Nanotechnology #Nitride #Optoelectronics #Physics #Quantum mechanics #Semiconductor #Semiconductor materials and devices #Silicon #Transition metal #cond-mat.mtrl-sci
paper · pdf · doi:10.1016/j.physleta.2010.05.064
19 pages, 4 figures
arxiv created 2010/04/01 · openalex publication_date 2010/05/27 · arxiv updated 2015/05/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
The electronic and magnetic properties of transition-metal doped β-Ge3N4 have been studied using first-principles calculations. The results show that the substitutional transition-metal impurities tend to cluster. The V and Cr doped Ge3N4 compounds are ferromagnetic semiconductors, while the compounds with Mn and Fe doping show a half-metallic ferromagnetic character.