2010/01/30 by Wei‐Jiang Gong, Weijiang Gong, Hui Li +3
Engineering · Physics and Astronomy · #Biasing #Charge (physics) #Condensed matter physics #Electrical engineering #Interference (communication) #Physics #Quantum #Quantum and electron transport phenomena #Quantum dot #Quantum mechanics #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #Spin (aerodynamics) #Symmetry (geometry) #Terminal (telecommunication) #Transverse plane #Voltage #cond-mat.mes-hall
paper · pdf · doi:10.1016/j.physleta.2011.02.007
6 pages, 5 figures
arxiv created 2010/01/30 · openalex publication_date 2011/02/05 · arxiv updated 2015/05/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
In this work, we show that in a four-quantum-dot ring, via introducing a local Rashba spin-orbit interaction the spin bias in the transverse terminals can be detected by observing the charge currents in the longitudinal probes. It is found that due to the Rashba interaction, the quantum interference in this system becomes spin-dependent and the opposite-spin currents induced by the spin bias can present different magnitudes, so charge currents emerge. Besides, the charge currents rely on both the magnitude and spin polarization direction of the spin bias. It is believed that this method provides an electrical but practical scheme to detect the spin bias (or the spin current).