2009/09/24 by Craig Pryor, C. E. Pryor, Michael E. Flatté +3
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Atomic physics #Condensed matter physics #Degenerate energy levels #Electronic structure #Germanium #Ground state #Materials science #Optoelectronics #Physics #Quantum #Quantum and electron transport phenomena #Quantum dot #Quantum dot laser #Quantum mechanics #Quantum point contact #Quantum well #Quantum wire #Semiconductor #Semiconductor Quantum Structures and Devices #Silicon #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.3266864
arxiv created 2009/09/24 · openalex publication_date 2009/12/07 · arxiv updated 2015/05/14 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/06
We calculate that the electronic states of strained self-assembled germanium quantum dots embedded in silicon provide a convenient two-state system for electrical control. An electronic state localized at the apex of the quantum dot is nearly degenerate with a state localized at the base of the quantum dot. Small electric fields shift the electronic ground state from apex-localized to base-localized, which permits sensitive tuning of the electronic, optical, and magnetic properties of the dot. As one example, we describe how spin-spin coupling between two germanium quantum dots can be controlled very sensitively by shifting the individual dot’s electronic ground state between apex and base.