2001/01/05 by Jeremy Levy · 2 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat #quant-ph
paper · pdf · doi:10.1103/physreva.64.052306
10 pages, 3 figures
arxiv created 2001/01/05 · openalex publication_date 2001/10/10 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
A proposal is described to construct a quantum-information processor using ferroelectrically coupled Ge/Si quantum dots. The spin of single electrons form the fundamental qubits. Small-diameter (10 nm) Ge quantum dots are optically excited to create spin-polarized electrons in Si. The static polarization of an epitaxial ferroelectric thin film confines electrons laterally in the semiconductor; spin interactions between nearest-neighbor electrons are mediated by the nonlinear process of optical rectification. Single-qubit operations are achieved through ``g-factor engineering'' in the Ge/Si structures; spin-spin interactions occur through Heisenberg exchange, controlled by ferroelectric gates. A method for reading out the final state, while required for quantum computing, is not described; approaches involving single-electron transistors may prove fruitful in satisfying this requirement.