2009/09/16 by Ningning Hao, Wei Zhang, Zhigang Wang +2 · 1 citation
Chemistry · Mathematics · Physics and Astronomy · #Bilayer #Chemistry #Condensed matter physics #Electron #Fermi gas #Mathematics #Membrane #Phase transition #Physics #Physics of Superconductivity and Magnetism #Quantum #Quantum and electron transport phenomena #Quantum mechanics #Quantum phase transition #Quantum, superfluid, helium dynamics #Superconductivity #Topological order #Topology (electrical circuits) #cond-mat.mes-hall #cond-mat.str-el
paper · pdf · doi:10.1103/physrevb.81.125301
5 pages, 4 figures
arxiv created 2009/09/16 · openalex publication_date 2010/03/01 · arxiv updated 2015/05/14 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We study a bilayer two-dimension-electron-gas (2DEG) adjacent to a type-II superconductor thin film with a pinned vortex lattice. We find that with increasing interlayer tunneling, the system of half-filling presents three phases: gapped phase-I (topological insulator), gapless critical phase-II (metal), and gapped phase-III (band insulator). The total Hall conductance for phase-I/III is 2/0 e2/h, and has nonquantized values in phase-II. The excitation (response to topological defect, a local vortex defect) in these three phases shows different behaviors due to the topological property of the system, including fractional charge e/2 for each layer in phase-I. While in the case of quarter-filling, the system undergoes a quantum phase transition from metallic phase to topological insulator phase.