Pinning and switching of magnetic moments in bilayer graphene

2009/06/22 by Eduardo V. Castro, Eduardo V Castro, María P. López-Sancho +3 · 19 citations
Chemistry · Materials Science · Physics and Astronomy · #Advanced Physical and Chemical Molecular Interactions #Bilayer #Bilayer graphene #Chemical and Physical Properties of Materials #Gate voltage #Graphene #Graphene research and applications #Magnetic field #Magnetic moment #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1088/1367-2630/11/9/095017

published in New Journal of Physics 11(9), 095017 (IOP Publishing) · 9 pages, 4 figures

arxiv created 2009/06/22 · openalex publication_date 2009/09/30 · arxiv updated 2015/05/13 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

We examine the magnetic properties of the localized states induced by lattice vacancies in bilayer graphene with an unrestricted Hartree–Fock calculation. We show that, with realistic values of the parameters and for experimentally accessible gate voltages, we can have magnetic switching between an unpolarized and a fully polarized system.

Citations

• Gate-induced insulating state in bilayer graphene devices
• Band Structure of Graphite
• Vacancy-induced magnetism in graphene and graphene ribbons
• Magnetic moments in the presence of topological defects in graphene
• Electron-electron interactions and the phase diagram of a graphene bilayer
• Band Structure of Graphite and de Haas-van Alphen Effect
• The electronic properties of graphene
• Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
• Nonmagnetic-Defect-Induced Magnetism in Graphene

Cited by

• Electronic properties of graphene-based bilayer systems
• Probing local moments in nanographenes with electron tunneling spectroscopy