2009/05/31 by L. A. Falkovsky
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Band gap #Bilayer #Bilayer graphene #Chemistry #Condensed matter physics #Doping #Electron #Gate voltage #Graphene #Graphene research and applications #Materials science #Membrane #Molecular Junctions and Nanostructures #Nanotechnology #Physics #Quantum and electron transport phenomena #Quantum mechanics #Transistor #Voltage #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.80.113413
4 pages,4 figures
arxiv created 2009/06/25 · openalex publication_date 2009/09/30 · arxiv updated 2015/05/13 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
The tight-binding model of a graphene bilayer is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the equation for the gap is obtained. This equation for the ratio of the gap to the chemical potential is determined only by the screening constant. Thus the gap is strictly proportional to the gate voltage or the carrier concentration in the absence of donors or acceptors. In the opposite case, where the donors or acceptors are present, the gap demonstrates the asymmetrical behavior on the electron and hole sides of the gate bias.