2009/05/08 by Xuesong Li, Weiwei Cai, Jinho An +11 · 10 citations
Engineering · Materials Science · Physics and Astronomy · #Advancements in Battery Materials #Chemical engineering #Chemical vapor deposition #Composite material #Copper #Graphene #Graphene and Nanomaterials Applications #Graphene oxide paper #Graphene research and applications #Graphite #Layer (electronics) #Materials science #Metallurgy #Nanotechnology #Optoelectronics #Silicon #cond-mat.mtrl-sci
paper · pdf · doi:10.1126/science.1171245
published as Science Express (May 7, 2009) · 12 pages, 6 figures
openalex publication_date 2009/05/08 · arxiv created 2009/05/13 · arxiv updated 2015/05/13 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/06
Graphene has been attracting great interest because of its distinctive band structure and physical properties. Today, graphene is limited to small sizes because it is produced mostly by exfoliating graphite. We grew large-area graphene films of the order of centimeters on copper substrates by chemical vapor deposition using methane. The films are predominantly single-layer graphene, with a small percentage (less than 5%) of the area having few layers, and are continuous across copper surface steps and grain boundaries. The low solubility of carbon in copper appears to help make this growth process self-limiting. We also developed graphene film transfer processes to arbitrary substrates, and dual-gated field-effect transistors fabricated on silicon/silicon dioxide substrates showed electron mobilities as high as 4050 square centimeters per volt per second at room temperature.