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Phonon-Induced Population Dynamics and Intersystem Crossing in Nitrogen-Vacancy Centers

2014/06/30 by Michael Goldman, M. L. Goldman, Alp Sipahigil +15 · 190 citations
Chemistry · Earth and Planetary Sciences · Materials Science · Physics and Astronomy · #Atomic physics #Center (category theory) #Chemistry #Condensed matter physics #Diamond #Diamond and Carbon-based Materials Research #Electronic and Structural Properties of Oxides #Excited state #High-pressure geophysics and materials #Intersystem crossing #Level crossing #Materials science #Measure (data warehouse) #Mixing (physics) #Molecular physics #Nitrogen-vacancy center #Phonon #Physics #Population #Quantum mechanics #Vacancy defect #cond-mat.mes-hall #quant-ph

paper · pdf · doi:10.1103/physrevlett.114.145502

published in Physical Review Letters 114(14), 145502 (American Physical Society)

arxiv created 2015/03/03 · openalex publication_date 2015/04/08 · arxiv updated 2015/04/16 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We report direct measurement of population dynamics in the excited state manifold of a nitrogen-vacancy (NV) center in diamond. We quantify the phonon-induced mixing rate and demonstrate that it can be completely suppressed at low temperatures. Further, we measure the intersystem crossing (ISC) rate for different excited states and develop a theoretical model that unifies the phonon-induced mixing and ISC mechanisms. We find that our model is in excellent agreement with experiment and that it can be used to predict unknown elements of the NV center's electronic structure. We discuss the model's implications for enhancing the NV center's performance as a room-temperature sensor.

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