Electronic Properties and Metrology Applications of the DiamondNV−Center under Pressure

2013/05/31 by Marcus W. Doherty, Viktor V. Struzhkin, David A. Simpson +10 · 4 citations
Earth and Planetary Sciences · Materials Science · Physics and Astronomy · #Diamond and Carbon-based Materials Research #Force Microscopy Techniques and Applications #High-pressure geophysics and materials #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevlett.112.047601

published as Physical Review Letters 112, 047601 (2014) · 6 pages, 3 figures

arxiv created 2013/10/08 · openalex publication_date 2014/01/31 · arxiv updated 2014/02/12 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/04

Abstract

The negatively charged nitrogen-vacancy (NV-) center in diamond has realized new frontiers in quantum technology. Here, the optical and spin resonances of the NV- center are observed under hydrostatic pressures up to 60 GPa. Our results motivate powerful new techniques to measure pressure and image high-pressure magnetic and electric phenomena. Additionally, molecular orbital analysis and semiclassical calculations provide insight into the effects of compression on the electronic orbitals of the NV- center.

Citations

• Nitrogen-vacancy center in diamond: Model of the electronic structure and associated dynamics
• Ab initiosupercell calculations on nitrogen-vacancy center in diamond: Electronic structure and hyperfine tensors
• Optical studies of the 1.945 eV vibronic band in diamond
• Calibration of the ruby pressure gauge to 800 kbar under quasi‐hydrostatic conditions
• The nitrogen-vacancy colour centre in diamond
• Infrared emission of the NV centre in diamond: Zeeman and uniaxial stress studies
• Hydrostatic limits of 11 pressure transmitting media

Cited by

• Data for Limits of absolute vector magnetometry with NV centers in diamond
• State-selective intersystem crossing in nitrogen-vacancy centers
• Subpicotesla Diamond Magnetometry
• Investigation and comparison of measurement schemes in the low frequency biosensing regime using solid-state defect centers