2014/10/31 by Srijit Goswami, Emre Mulazimoglu, Lieven M. K. Vandersypen +1
Engineering · Materials Science · Physics and Astronomy · #Condensed matter physics #Electrical engineering #Electronic and Structural Properties of Oxides #Ferroelectric and Negative Capacitance Devices #Gate oxide #Gate voltage #Josephson effect #Logic gate #Magnetic and transport properties of perovskites and related materials #Materials science #Nanoscopic scale #Nanostructure #Nanotechnology #Optoelectronics #Oxide #Physics #Superconductivity #Transistor #Voltage #cond-mat.mes-hall
paper · pdf · doi:10.1021/acs.nanolett.5b00216
published as Nano Letters 15, 2627 (2015) · Version after peer review; includes additional data on superconductivity
openalex publication_date 2015/03/06 · arxiv created 2015/03/19 · arxiv updated 2015/04/10 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We develop a robust and versatile platform to define nanostructures at oxide interfaces via patterned top gates. Using LaAlO3/SrTiO3 as a model system, we demonstrate controllable electrostatic confinement of electrons to nanoscale regions in the conducting interface. The excellent gate response, ultralow leakage currents, and long-term stability of these gates allow us to perform a variety of studies in different device geometries from room temperature down to 50 mK. Using a split-gate device we demonstrate the formation of a narrow conducting channel whose width can be controllably reduced via the application of appropriate gate voltages. We also show that a single narrow gate can be used to induce locally a superconducting to insulating transition. Furthermore, in the superconducting regime we see indications of a gate-voltage controlled Josephson effect.