Aharonov Bohm effect in 2D topological insulator

2015/01/06 by G. M. Gusev, Z. D. Kvon, O. A. Shegai +4
Materials Science · Physics and Astronomy · #Band gap #Condensed matter physics #Gapless playback #Graphene research and applications #Insulator (electricity) #Magnetic field #Magnetoresistance #Physics #Quantum many-body systems #Quantum mechanics #Topological Materials and Phenomena #Topological insulator #cond-mat.mes-hall

paper · pdf · doi:10.1016/j.ssc.2014.12.017

published as Solid.State Commun., v.205, 4-8 (2015) · 6 pages, 6 figures

openalex publication_date 2015/01/06 · arxiv created 2015/01/15 · arxiv updated 2015/01/16 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We present magnetotransport measurements in HgTe quantum well with inverted band structure, which expected to be a two-dimensional topological insulator having the bulk gap with helical gapless states at the edge. The negative magnetoresistance is observed in the local and nonlocal resistance configuration followed by the periodic oscillations damping with magnetic field. We attribute such behaviour to Aharonov-Bohm effect due to magnetic flux through the charge carrier puddles coupled to the helical edge states. The characteristic size of these puddles is about 100 nm.

Citations

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• Topological Insulators