2013/02/25 by G. M. Gusev, E. B Olshanetsky, E. B. Olshanetsky +4 · 3 citations
Materials Science · Mathematics · Physics and Astronomy · #Condensed matter physics #Electronic and Structural Properties of Oxides #Enhanced Data Rates for GSM Evolution #Geometry #Graphene research and applications #Insulator (electricity) #Magnetic field #Magnetoresistance #Mathematics #Perpendicular #Physics #Quantum mechanics #Quantum well #Symmetry (geometry) #Topological Materials and Phenomena #Topological insulator #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.87.081311
published as Physical Review B, 87, 081311(R) (2013) · 5 pages, 4 figures
openalex publication_date 2013/02/25 · arxiv created 2013/02/27 · arxiv updated 2013/02/28 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We report magnetotransport measurements in a HgTe quantum well with an inverted band structure, which is expected to be a two-dimensional (2D) topological insulator. A small magnetic field perpendicular the 2D layer breaks the time-reversal symmetry and thereby suppresses the edge state transport. A linear magnetoresistance is observed in low magnetic fields when the chemical potential moves through the bulk gap. That magnetoresistance is well described by numerical calculations of the edge state magnetotransport in the presence of nonmagnetic disorder. With the magnetic field increasing, both the local and nonlocal resistances first sharply decrease and then increase again in disagreement with the existing theories.