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Spin-Relaxation Anisotropy in a GaAs Quantum Dot

2014/09/03 by Pasquale Scarlino, P. Scarlino, E. Kawakami +10 · 3 citations
Engineering · Physics and Astronomy · #Anisotropy #Condensed matter physics #Electron #Field (mathematics) #Geometry #Ground state #Magnetic field #Orientation (vector space) #Physics #Quantum and electron transport phenomena #Quantum dot #Quantum mechanics #Relaxation (psychology) #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #Spin (aerodynamics) #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevlett.113.256802

published as Phys. Rev. Lett. 113, 256802 (2014) · 8 pages, 8 figures

arxiv created 2014/09/03 · openalex publication_date 2014/12/19 · arxiv updated 2015/01/16 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We report that the electron spin-relaxation time T1 in a GaAs quantum dot with a spin-1/2 ground state has a 180° periodicity in the orientation of the in-plane magnetic field. This periodicity has been predicted for circular dots as being due to the interplay of Rashba and Dresselhaus spin orbit contributions. Different from this prediction, we find that the extrema in the T1 do not occur when the magnetic field is along the [110] and [11[over ¯]0] crystallographic directions. This deviation is attributed to an elliptical dot confining potential. The T1 varies by more than 1 order of magnitude when rotating a 3 T field, reaching about 80 ms for the optimal angle. We infer from the data that in our device the signs of the Rashba and Dresselhaus constants are opposite.

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