2014/03/31 by Yanfeng Ge, Wenhui Wan, Wanxiang Feng +2 · 2 citations
Materials Science · Physics and Astronomy · #2D Materials and Applications #Condensed matter physics #Doping #Graphene research and applications #MXene and MAX Phase Materials #Materials science #Physics #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.90.035414
published as Physical Review B 90, 035414 (2014) · publised version
arxiv created 2014/06/30 · openalex publication_date 2014/07/14 · arxiv updated 2014/12/10 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
The doping and strain effects on the electron transport of monolayer MoS2 are systematically investigated using the first-principles calculations with Boltzmann transport theory. We estimate the mobility has a maximum 275 cm2/(V\phantom\rule0.16em0exs) in the low doping level under the strain-free condition. Applying a small strain (\ensuremath∼3%) can improve the maximum mobility to 1150 cm2/(V\phantom\rule0.16em0exs) and the strain effect is more significant in the high doping level. We demonstrate that the electric resistance mainly due to the electron transitions between K and Q valleys scattered by the M momentum phonons. However, the strain can effectively suppress this type of electron-phonon coupling by changing the energy difference between the K and Q valleys. This sensitivity of mobility to the external strain may direct the improving electron transport of MoS2.