Charge Relaxation in a Single-ElectronSi/SiGeDouble Quantum Dot

2013/04/15 by Ke Wang, K. Wang, C. Payette +5 · 1 citation
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Atomic physics #Charge (physics) #Computer science #Condensed matter physics #Coupling (piping) #Data mining #Electron #Excited state #Materials science #Measure (data warehouse) #Physics #Quantum and electron transport phenomena #Quantum mechanics #Quantum tunnelling #Relaxation (psychology) #Semiconductor materials and devices #cond-mat.mes-hall #quant-ph

paper · pdf · doi:10.1103/physrevlett.111.046801

published as Phys. Rev. Lett. 111, 046801 (2013) · Related papers at http://pettagroup.princeton.edu

arxiv created 2013/04/15 · openalex publication_date 2013/07/22 · arxiv updated 2014/08/27 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

We measure the interdot charge relaxation time T1 of a single electron trapped in an accumulation mode Si/SiGe double quantum dot. The energy level structure of the charge qubit is determined using photon assisted tunneling, which reveals the presence of a low-lying excited state. We systematically measure T1 as a function of detuning and interdot tunnel coupling and show that it is tunable over four orders of magnitude, with a maximum of 45 μs for our device configuration.

Citations

• Charge sensing of excited states in an isolated double quantum dot
• Coherent control of macroscopic quantum states in a single-Cooper-pair box
• Allowed and forbidden transitions in artificial hydrogen and helium atoms
• Quantum Noise in the Josephson Charge Qubit
• Differential Charge Sensing and Charge Delocalization in a Tunable Double Quantum Dot
• Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots
• Fast sensing of double-dot charge arrangement and spin state with a radio-frequency sensor quantum dot

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• Quantum and tunneling capacitance in charge and spin qubits