2014/01/31 by Eric M. Spanton, Eric Spanton, Katja C. Nowack +4 · 1 citation
Materials Science · Physics and Astronomy · #Artificial intelligence #Computer science #Condensed matter physics #Electronic and Structural Properties of Oxides #Enhanced Data Rates for GSM Evolution #Optics #Physics #Quantum and electron transport phenomena #Scattering #Spin (aerodynamics) #Thermodynamics #Topological Materials and Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevlett.113.026804
published as Phys. Rev. Lett. 113, 026804 (2014) · Version accepted to Physical Review Letters (http://prl.aps.org/). 12 pages, 3 figures. Supplementary Online Materials available at http://stanford.edu/group/moler/papers/Spanton_InAsGaSb_imaging_SI_v2.pdf
arxiv created 2014/06/21 · openalex publication_date 2014/07/11 · arxiv updated 2014/07/14 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
Quantum spin Hall devices with edges much longer than several microns do not display ballistic transport; that is, their measured conductances are much less than e(2)/h per edge. We imaged edge currents in InAs/GaSb quantum wells with long edges and determined an effective edge resistance. Surprisingly, although the effective edge resistance is much greater than h/e(2), it is independent of temperature up to 30 K within experimental resolution. Known candidate scattering mechanisms do not explain our observation of an effective edge resistance that is large yet temperature independent.