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Measure of Diracness in two-dimensional semiconductors

2013/12/31 by M. O. Goerbig, Gilles Montambaux, G. Montambaux +2 · 34 citations
Materials Science · Mathematics · Physics and Astronomy · #2D Materials and Applications #Ab initio #Character (mathematics) #Computer science #Condensed matter physics #Dirac (video compression format) #Diselenide #Electron #Geometry #Graphene research and applications #Materials science #Mathematics #Measure (data warehouse) #Mixing (physics) #Physics #Quantum mechanics #Semiconductor #Topological Materials and Phenomena #cond-mat.mes-hall

paper · pdf · doi:10.1209/0295-5075/105/57005

published in Europhysics Letters (EPL) 105(5), 57005 (Institute of Physics) · 6 pages, 2 figures ; new version (with minor modifications) accepted for publication in EPL

openalex publication_date 2014/03/01 · arxiv created 2014/03/06 · arxiv updated 2014/03/27 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We analyze the low-energy properties of two-dimensional direct-gap semiconductors, such as, for example, the transition-metal dichalcogenides MoS 2 , WS 2 , and their diselenide analogues MoSe 2 , WSe 2 , etc., which are currently intensively investigated. In general, their electrons have a mixed character —they can be massive Dirac fermions as well as simple Schrödinger particles. We propose a measure (Diracness) for the degree of mixing between the two characters and discuss how this quantity can in principle be extracted experimentally, within magneto-transport measurements, and numerically via ab initio calculations.

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