2013/05/31 by A. A. Katanin, A. Katanin
Materials Science · Mathematics · Physics and Astronomy · #Born approximation #Condensed matter physics #Crossover #Density of states #Diagonal #Electron #Fermi level #Functional renormalization group #Graphene #Graphene research and applications #Impurity #Mathematics #Physics #Quantum and electron transport phenomena #Quantum mechanics #Renormalization group #Symmetry (geometry) #Topological Materials and Phenomena #cond-mat.dis-nn #cond-mat.mes-hall #cond-mat.mtrl-sci #cond-mat.str-el
paper · pdf · doi:10.1103/physrevb.88.241401
published as Phys. Rev. B 88, 241401(R) (2013) · 4+1 pages, 5 figures
arxiv created 2013/11/13 · openalex publication_date 2013/12/02 · arxiv updated 2013/12/10 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We consider an effect of weak impurities on the electronic properties of graphene within the functional renormalization-group approach. The energy dependences of the electronic self-energy and density of states near the neutrality point are discussed. Depending on the symmetry of the impurities, the electronic damping \ensuremathΓ and density of states \ensuremathρ can deviate substantially from those given by the self-consistent Born approximation. We investigate the crossover from the results of the self-consistent Born approximation, which are valid far from the neutrality point to the strong-coupling (diffusive) regime near the neutrality point. For impurities, which are diagonal in both valley and sublattice indices, we obtain a finite density of states at the Fermi level with values which are much bigger than the result of the self-consistent Born approximation.