Sub-GeV Electron and Positron Channeling in Straight, Bent and Periodically Bent Silicon Crystals

2013/07/25 by G B Sushko, A V Korol, Walter Greiner +1 · 2 citations
Physics and Astronomy · #physics.acc-ph

paper · pdf · doi:10.1088/1742-6596/438/1/012018

published as Journal of Physics: Conference Series vol.438, 012018 (2013) · 11 pages, 8 Figures

arxiv created 2013/07/25 · arxiv updated 2013/07/26

Abstract

Preliminary results of numerical simulations of electron and positron channeling and emission spectra are reported for straight, uniformly bent and periodically bent silicon crystal. The projectile trajectories are computed using the newly developed module [1] of the MBN Explorer package [2,3]. The electron and positron channeling along Si(110) and Si(111) crystallographic planes are studied for the projectile energies 195--855 MeV.

Cited by

• Radiation Emission by Electrons Channeling in Bent Silicon Crystals
• Observation of narrow-band γ radiation from a boron-doped diamond superlattice with an 855 MeV electron beam

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