Radiation Emission by Electrons Channeling in Bent Silicon Crystals

2014/03/24 by Roman G. Polozkov, Polozkov, R G, V. K. Ivanov +7
Engineering · Physics and Astronomy · #Accelerator Physics (physics.acc-ph) #Crystallography and Radiation Phenomena #FOS: Physical sciences #Ion-surface interactions and analysis #X-ray Spectroscopy and Fluorescence Analysis

paper · pdf · doi:10.48550/arxiv.1403.6040

openalex publication_date 2014/03/24 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Results of numerical simulations of electron channeling and emission spectra are reported for straight and uniformly bent silicon crystal. The projectile trajectories are computed using the newly developed module [1] of the MBN Explorer package [2,3]. The electron channeling along Si(110) crystallographic planes is studied for the projectile energy 855 MeV.

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