2010/05/31 by Freddie Withers, Marc Dubois, Alexander K. Savchenko · 1 citation
Physics and Astronomy · #cond-mat.mtrl-sci #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.82.073403
published as Phys. Rev. B 82, 073403 (2010)
arxiv created 2010/09/06 · arxiv updated 2013/05/29
We have fabricated transistor structures using fluorinated single-layer graphene flakes and studied their electronic properties at different temperatures. Compared with pristine graphene, fluorinated graphene has very large and strongly temperature dependent resistance in the electro-neutrality region. We show that fluorination creates a mobility gap in graphene's spectrum where electron transport takes place via localised electron states.