2012/08/18 by V. V. Mkhitaryan, E. G. Mishchenko · 12 citations
Chemistry · Materials Science · Physics and Astronomy · #Anderson impurity model #Band gap #Bilayer #Bilayer graphene #Chemistry #Condensed matter physics #Electron #Electron and X-Ray Spectroscopy Techniques #Graphene #Graphene research and applications #Impurity #Materials science #Membrane #Nanotechnology #Physics #Quantum and electron transport phenomena #Quantum mechanics #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevlett.110.086805
published in Physical Review Letters 110(8), 086805 (American Physical Society) · 5 pages, 2 figures
arxiv created 2012/08/18 · openalex publication_date 2013/02/20 · arxiv updated 2013/04/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
The Anderson impurity problem is considered for a graphene bilayer subject to a gap-opening bias. In-gap localized states are produced even when the impurity level overlaps with the continuum of band electrons. The effect depends strongly on the polarity of the applied bias as long as hybridization with the impurity occurs within a single layer. For an impurity level inside the conduction band a positive bias creates the new localized in-gap state. A negative bias does not produce the same result and leads to a simple broadening of the impurity level. The implications for transport are discussed including a possibility of the gate-controlled Kondo effect.