2015/09/28 by Sydney Provence, S. R. Provence, Russell J. Ricker +6 · 1 citation
Engineering · Physics and Astronomy · Chemistry · #Advanced Semiconductor Detectors and Materials #Semiconductor Quantum Structures and Devices #Spectroscopy and Laser Applications
paper · doi:10.1063/1.4931914
InAs/GaSb mid-wave, cascaded superlattice light emitting diodes are found to give higher radiance when epitaxially grown on mismatched GaAs substrates compared to lattice-matched GaSb substrates. Peak radiances of 0.69 W/cm2-sr and 1.06 W/cm2-sr for the 100 × 100 μm2 GaSb and GaAs-based devices, respectively, were measured at 77 K. Measurement of the recombination coefficients shows the shorter Shockley-Read-Hall recombination lifetime as misfit dislocations for growth on GaAs degrade the quantum efficiency only at low current injection. The improved performance on GaAs was found to be due to the higher transparency and improved thermal properties of the GaAs substrate.