2015/09/28 by Sydney Provence, S. R. Provence, Russell J. Ricker +6 · 1 citation
Chemistry · Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #Diode #Epitaxy #Gallium antimonide #Gallium arsenide #Indium arsenide #Infrared #Laser #Layer (electronics) #Light-emitting diode #Materials science #Nanotechnology #Optics #Optoelectronics #Physics #Quantum efficiency #Quantum well #Semiconductor Quantum Structures and Devices #Spectroscopy and Laser Applications #Substrate (aquarium) #Superlattice
paper · doi:10.1063/1.4931914
openalex publication_date 2015/09/28 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/27
InAs/GaSb mid-wave, cascaded superlattice light emitting diodes are found to give higher radiance when epitaxially grown on mismatched GaAs substrates compared to lattice-matched GaSb substrates. Peak radiances of 0.69 W/cm2-sr and 1.06 W/cm2-sr for the 100 × 100 μm2 GaSb and GaAs-based devices, respectively, were measured at 77 K. Measurement of the recombination coefficients shows the shorter Shockley-Read-Hall recombination lifetime as misfit dislocations for growth on GaAs degrade the quantum efficiency only at low current injection. The improved performance on GaAs was found to be due to the higher transparency and improved thermal properties of the GaAs substrate.