2007/01/01 by X. T. Zhou, Tsun‐Kong Sham, T. K. Sham +7
Chemistry · Engineering · Materials Science · #Absorption (acoustics) #Absorption edge #Amorphous solid #Analytical Chemistry (journal) #Band gap #Boron #Boron and Carbon Nanomaterials Research #Boron nitride #Chemical vapor deposition #Chemistry #Composite material #Crystallinity #Crystallography #Diamond #Diamond and Carbon-based Materials Research #Layer (electronics) #Materials science #Metal and Thin Film Mechanics #Nanotechnology #Nitride #Optoelectronics #Substrate (aquarium) #Thin film
paper · doi:10.1063/1.2405717
openalex publication_date 2007/01/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Cubic boron nitride (c-BN) films synthesized by various energetic species assisted physical vapor deposition and chemical vapor deposition techniques on Si and diamond-coated Si substrates have been investigated by boron and nitrogen K-edge angle-resolved x-ray absorption near-edge structure in both total electron yield and fluorescence yield modes. X-ray absorption spectrum has been developed to study the film structure, the quantity and distribution of the partially ordered turbostratic (t-BN) and amorphous (a-BN) sp2-hybridized BN phases, and the t-BN∕a-BN ratios. The preferred direction of the t-BN basal planes at the interface between c-BN and substrate is found to be normal or nearly normal to the substrate. The content of the sp2-bonded BN in the c-BN films deposited on diamond-coated Si substrates reduces remarkably. The modifications of the electronic structure of the c-BN films with respect to bulk hexagonal BN and c-BN have been investigated and the crystallinity of c-BN films has also been evaluated from the x-ray absorption near edge structure results.