2012/06/05 by Han Liu, Jiangjiang Gu, Peide D. Ye +1
Engineering · Materials Science · Physics and Astronomy · #2D Materials and Applications #Channel (broadcasting) #Conductance #Enhanced Data Rates for GSM Evolution #Graphene research and applications #Mode (computer interface) #Nanowire Synthesis and Applications #Scaling #Threshold voltage #Transistor #Trimming #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1109/led.2012.2202630
published as IEEE Electron Devices Letters 33, 1273-1275 (2012) · 3 pages, 3 figures, to appear in IEEE Electron Device Letters
arxiv created 2012/06/05 · openalex publication_date 2012/07/14 · arxiv updated 2012/09/13 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We study the channel width scaling of back-gated MoS2metal-oxide-semiconductor field-effect transistors from 2 μm down to 60 nm. We reveal that the channel conductance scales linearly with channel width, indicating no evident edge damage for MoS2nanoribbons with widths down to 60 nm as defined by plasma dry etching. However, these transistors show a strong positive threshold voltage (VT) shift with narrow channel widths of less than 200 nm. Our results also show that transistors with thinner channel thicknesses have largerVTshifts associated with width scaling. Devices fabricated on a 6-nm-thick MoS2crystal underwent the transition from depletion mode to enhancement mode.