2010/08/31 by D. Laroche, Dominique Laroche, G. Gervais +4 · 3 citations
Engineering · Materials Science · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Condensed matter physics #Coulomb #Coulomb blockade #Drag #Electric current #Electron #Mechanics #Momentum (technical analysis) #Momentum transfer #Nanowire #Physics #Quantum and electron transport phenomena #Quantum mechanics #Quantum wire #Thermal properties of materials #Transistor #Voltage #cond-mat.mes-hall #cond-mat.str-el
paper · pdf · doi:10.1038/nnano.2011.182
published as Nature Nanotechnology 6, 793 - 797 (2011) · 4 pages, 4 figures
openalex publication_date 2011/10/30 · arxiv created 2012/08/20 · arxiv updated 2012/08/21 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Electron interactions in and between wires become increasingly complex and important as circuits are scaled to nanometre sizes, or employ reduced-dimensional conductors like carbon nanotubes, nanowires and gated high mobility 2D electron systems. This is because the screening of the long-range Coulomb potential of individual carriers is weakened in these systems, which can lead to phenomenon such as Coulomb drag: a current in one wire induces a voltage in a second wire through Coulomb interactions alone. Previous experiments have observed electron drag in wires separated by a soft electrostatic barrier \gtrsim 80 nm. Here, we measure both positive and negative drag between adjacent vertical quantum wires that are separated by ∼ 15 nm and have independent contacts, which allows their electron densities to be tuned independently. We map out the drag signal versus the number of electron subbands occupied in each wire, and interpret the results in terms of momentum-transfer and charge-fluctuation induced transport models. For wires of significantly different subband occupancies, the positive drag effect can be as large as 25%.