2008/09/30 by Alex Levchenko, Alex Kamenev
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevlett.101.216806
published as Phys. Rev. Lett. 101, 216806 (2008) · 6 pages, 2 figures
arxiv created 2008/10/22 · openalex publication_date 2008/11/21 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We study the drag effect in a system of two electrically isolated quantum point contacts, coupled by Coulomb interactions. Drag current exhibits maxima as a function of quantum point contacts gate voltages when the latter are tuned to the transitions between quantized conductance plateaus. In the linear regime this behavior is due to enhanced electron-hole asymmetry near an opening of a new conductance channel. In the nonlinear regime the drag current is proportional to the shot noise of the driving circuit, suggesting that the Coulomb drag experiments may be a convenient way to measure the quantum shot noise. Remarkably, the transition to the nonlinear regime may occur at driving voltages substantially smaller than the temperature.