2012/02/29 by Babak Fallahazad, Yufeng Hao, Kayoung Lee +5
Materials Science · Physics and Astronomy · #Diamond and Carbon-based Materials Research #Graphene research and applications #Quantum and electron transport phenomena #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.85.201408
published as Phys. Rev. B 85, 201408(R) (2012) · 5 pages, 4 figures
arxiv created 2012/05/13 · openalex publication_date 2012/05/18 · arxiv updated 2012/05/21 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/01
We examine the quantum Hall effect in bilayer graphene grown on Cu substrates by chemical vapor deposition. Spatially resolved Raman spectroscopy suggests a mixture of Bernal (A-B) stacked and rotationally faulted (twisted) domains. Magnetotransport measurements performed on bilayer domains with a wide 2D band reveal quantum Hall states (QHSs) at filling factors \ensuremathν=4, 8, 12, consistent with a Bernal stacked bilayer, while magnetotransport measurements in bilayer domains defined by a narrow 2D band show a superposition of QHSs of two independent monolayers. The analysis of the Shubnikov--de Haas oscillations measured in twisted graphene bilayers provides the carrier density in each layer as a function of the gate bias and the interlayer capacitance.