2011/11/06 by Yeping Jiang, Yi‐Yang Sun, Y. Y. Sun +15 · 187 citations
Chemistry · Materials Science · Physics and Astronomy · #2D Materials and Applications #Analytical Chemistry (journal) #Chemistry #Condensed matter physics #Doping #Epitaxy #Fermi level #Graphene #Graphene research and applications #Materials science #Molecular beam epitaxy #Nanotechnology #Optoelectronics #Physics #Quantum mechanics #Substrate (aquarium) #Topological Materials and Phenomena #Topological insulator #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevlett.108.066809
published in Physical Review Letters 108(6), 066809 (American Physical Society) · 20 pages, 7 figures
arxiv created 2011/11/06 · openalex publication_date 2012/02/10 · arxiv updated 2012/02/14 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
High-quality Sb2Te3 films are obtained by molecular beam epitaxy on a graphene substrate and investigated by in situ scanning tunneling microscopy and spectroscopy. Intrinsic defects responsible for the natural p-type conductivity of Sb2Te3 are identified to be the Sb vacancies and Sb(Te) antisites in agreement with first-principles calculations. By minimizing defect densities, coupled with a transfer doping by the graphene substrate, the Fermi level of Sb2Te3 thin films can be tuned over the entire range of the bulk band gap. This establishes the necessary condition to explore topological insulator behaviors near the Dirac point.