2011/05/19 by Yao Shuai, Shengqiang Zhou, Danilo Bürger +2
Computer Science · Engineering · Physics and Astronomy · #Advanced Memory and Neural Computing #Commutation #Contact resistance #Electroforming #Ferroelectric and Negative Capacitance Devices #Layer (electronics) #Neural Networks Stability and Synchronization #Polarity (international relations) #Resistive touchscreen #Schottky barrier #Schottky diode #Trapping #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.3601113
published as J. Appl. Phys. 109, 124117 (2011) · 23 pages, 4 figures, accepted by J. Appl. Phys
arxiv created 2011/05/19 · openalex publication_date 2011/06/15 · arxiv updated 2011/06/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
Nonvolatile bipolar resistive switching has been observed in an Au/BiFeO3/Pt structure, where a Schottky contact and a quasi-Ohmic contact were formed at the Au/BiFeO3 and BiFeO3/Pt interface, respectively. By changing the polarity of the external voltage, the Au/BiFeO3/Pt is switched between two stable resistance states without an electroforming process. The resistance ratio is larger than two orders of magnitude. The resistive switching is understood by the electric field–induced carrier trapping and detrapping, which changes the depletion layer thickness at the Au/BiFeO3 interface.