2010/03/31 by John Schliemann · 17 citations
Materials Science · Physics and Astronomy · #Band gap #Condensed matter physics #Dielectric #Dielectric function #Electron #Fermi gas #Friedel oscillations #Hamiltonian (control theory) #Physics #Plasmon #Quantum and electron transport phenomena #Quantum mechanics #Random phase approximation #Semiconductor #Semimetal #Surface and Thin Film Phenomena #ZnO doping and properties #cond-mat.str-el
paper · pdf · doi:10.1209/0295-5075/91/67004
published in Europhysics Letters (EPL) 91(6), 67004 (Institute of Physics) · 4 pages, 1 figure included. Version to appear in Europhys. Lett
openalex publication_date 2010/09/01 · arxiv created 2010/09/29 · arxiv updated 2010/10/25 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
The semiconductor hole gas can be viewed as the companion of the classic interacting electron gas with a more complicated band structure and plays a crucial role in the understanding of ferromagnetic semiconductors. Here we study the dielectric function of a homogeneous hole gas in zinc blende III–V bulk semiconductors within random phase approximation with the valence band being modeled by Luttinger's Hamiltonian in the spherical approximation. In the static limit we find a beating of Friedel oscillations between the two Fermi momenta for heavy and light holes, while at large frequencies dramatic corrections to the plasmon dispersion occur.