Fast and slow edges in bilayer graphene nanoribbons: Tuning the transition from band to Mott insulator

2010/01/31 by Alberto Cortijo, László Oroszlány, Laszlo Oroszlany +1 · 1 citation
Chemistry · Materials Science · Physics and Astronomy · #Band gap #Bilayer #Bilayer graphene #Bosonization #Chemistry #Condensed matter physics #Enhanced Data Rates for GSM Evolution #Gate voltage #Graphene #Graphene nanoribbons #Graphene research and applications #Insulator (electricity) #Materials science #Nanotechnology #Optoelectronics #Physics #Quantum and electron transport phenomena #Quantum mechanics #Topological Materials and Phenomena #Transistor #Voltage #Zigzag #cond-mat.mes-hall #cond-mat.str-el

paper · pdf · doi:10.1103/physrevb.81.235422

published as Phys. Rev. B 81, 235422 (2010) · 5 pages, 8 figures. Version accepted for publication in PRB

arxiv created 2010/06/06 · openalex publication_date 2010/06/16 · arxiv updated 2010/07/08 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

We show that gated bilayer graphene zigzag ribbons possess a fast and a slow edge, characterized by edge-state velocities that differ due to non-negligible next-nearest-neighbor hopping elements. By applying bosonization and renormalization group methods, we find that the slow edge can acquire a sizable interaction-induced gap, which is tunable via an external gate voltage V_g. In contrast to the gate-induced gap in the bulk, the interaction-induced gap depends nonmonotonously on the on-site potential V.

Citations

• Bosonization and Strongly Correlated Systems
• Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
• Anisotropic Etching and Nanoribbon Formation in Single-Layer Graphene

Cited by

• Electronic properties of graphene-based bilayer systems