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High Critical Current Density 4 MA/cm2in Co-Doped BaFe2As2Epitaxial Films Grown on (La,Sr)(Al,Ta)O3Substrates without Buffer Layers

2010/05/12 by Takayoshi Katase, Hidenori Hiramatsu, Toshio Kamiya +1
Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #Iron-based superconductors research #Superconductivity in MgB2 and Alloys #cond-mat.supr-con

paper · pdf · doi:10.1143/apex.3.063101

published as Applied Physics Express 3 (2010) 063101 · to be published in Applied Physics Express

arxiv created 2010/05/12 · openalex publication_date 2010/05/28 · arxiv updated 2010/06/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/30

Abstract

High critical current densities J c of 4 MA/cm 2 at 4 K were obtained in Co-doped BaFe 2 As 2 (BaFe 2 As 2 :Co) epitaxial films grown directly on (La,Sr)(Al,Ta)O 3 substrates by pulsed laser deposition. Use of a highly pure target and improvement of film homogeneity were the critical factors to achieve the high J c . The improved BaFe 2 As 2 :Co epitaxial films contained almost no Fe impurity and showed high crystallinity (crystallite tilt angle Δω= 0.5° and twist angle Δφ= 0.5°) and a sharp superconducting transition with a width of 1.1 K. It is considered that these improvements resulted in the enhanced superconducting properties comparable to those of single crystals.

Citations