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Heteroepitaxial growth and optoelectronic properties of layered iron oxyarsenide, LaFeAsO

2008/08/31 by Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya +2 · 4 citations
Business, Management and Accounting · Chemistry · Materials Science · Physics and Astronomy · #Corporate Taxation and Avoidance #Inorganic Chemistry and Materials #Iron-based superconductors research #cond-mat.supr-con

paper · pdf · doi:10.1063/1.2996591

published as Appl. Phys. Lett. 93, 162504 (2008) · Submission: 31st July 2008, Accepted for publication in Appl. Phys. Lett

arxiv created 2008/09/19 · openalex publication_date 2008/10/20 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The epitaxial thin films of LaFeAsO were fabricated on MgO(001) and mixed-perovskite (La,Sr)(Al,Ta)O3(001) single-crystal substrates by pulsed laser deposition using a Nd-doped yttrium aluminum garnet second harmonic source and a 10at.% F-doped LaFeAsO disk target. Temperature dependences of the electrical resistivities showed no superconducting transition in the temperature range of 2–300K and were similar to those of undoped polycrystalline bulk samples. The transmittance spectrum exhibited a clear peak at ∼0.2eV, which is explained by ab initio calculations.

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