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Ultrafast graphene photodetector

2009/10/11 by Fengnian Xia, Thomas Mueller, Yu-Ming Lin +4 · 3,075 citations
Engineering · Materials Science · Physics and Astronomy · #2D Materials and Applications #Bandwidth (computing) #Computer science #Dark current #Graphene #Graphene research and applications #Laser #Materials science #Nanotechnology #Optics #Optoelectronics #Photodetector #Photonics #Physics #Plasmonic and Surface Plasmon Research #Quantum efficiency #Semiconductor #Telecommunications #Ultrashort pulse #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1038/nnano.2009.292

published in Nature Nanotechnology 4(12), 839-843 (Nature Portfolio) · 25 pages, 3 figures

openalex publication_date 2009/10/11 · arxiv created 2009/12/24 · arxiv updated 2010/01/14 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/08

Abstract

The electronic properties of graphene are unique and are attracting increased attention to this novel 2-dimensional system. Its photonic properties are not less impressive. For example, this single atomic layer absorbs through direct interband transitions a considerable fraction of the light (~2.3%) over a very a broad wavelength range. However, while applications in electronics are vigorously being pursued, photonic applications have not attracted as much attention. Here, we report on ultrafast photocurrent response measurements in graphene (single and few-layers) field-effect-transistors (FETs) up to 40 GHz light intensity modulation frequencies, using a 1.55 micron excitation laser. No photoresponse degradation is observable up to the highest measured frequency, demonstrating the feasibility and unique benefits of using graphene in photonics. Further analysis suggests that the intrinsic bandwidth of such graphene FET based photodetectors may exceed 500 GHz. Most notably, the generation and transport of the photo-carriers in such graphene photodetectors are fundamentally different from those in currently known semiconductor photodetectors, leading to a remarkably high bandwidth, zero source-drain bias (hence zero dark current) operation, and good internal quantum efficiency.

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