2009/10/31 by Akira Yoshikawa, Kosuke Uchida, Kunihito Koumoto +3 · 1 citation
Materials Science · Physics and Astronomy · #Advanced Thermoelectric Materials and Devices #Electronic and Structural Properties of Oxides #Ferroelectric and Piezoelectric Materials #cond-mat.mtrl-sci #cond-mat.str-el
paper · pdf · doi:10.1143/apex.2.121103
published as Appl. Phys. Express 2, 121103 (2009). · 13 pages, 4 figures
arxiv created 2009/11/19 · openalex publication_date 2009/12/11 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/30
We show herein fabrication and field-modulated thermopower for KTaO 3 single-crystal based field-effect transistors (FETs). The KTaO 3 FET exhibits field-effect mobility of ∼8 cm 2 V -1 s -1 , which is ∼4 times larger than that of SrTiO 3 FETs. The thermopower of the KTaO 3 FET decreased from 600 to 220 µV K -1 by the application of gate electric field up to 1.5 MV cm -1 , ∼400 µV K -1 below that of an SrTiO 3 FET, clearly reflecting the smaller carrier effective mass of KTaO 3 .